Si/SiO2 Wafer

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Product Details

Silicon oxide wafers use thermal oxidation process, through atmospheric pressure furnace tube equipment at high temperature (800℃~1150℃) conditions, through oxygen or water vapor on the surface of silicon wafer growth of silicon dioxide film. Processing thickness ranges from 50 nanometers to 2 microns, process temperatures up to 1100 degrees Celsius, and growth methods are divided into “wet ” and “dry “. The thermal oxide layer is a kind of oxide layer formed by “growth”. Compared with the oxide layer deposited by CVD, it has higher uniformity, better compactness and higher dielectric strength, and its quality is more excellent.

The thermal oxide layer is an excellent dielectric layer as an insulator. In many silicon-based devices, the thermal oxide layer plays an important role as a doping barrier layer and surface dielectric.

Drawing&Specification

Technical specifications for Si/SiO2 wafers

Parameter	data
Diameter	50.8±0.38
Grade	Prime
Material	Si+Sio2(thermal)
Orientation	(100)±0.5℃
Thickness of wafer(μm）	280±25
Thickness of oxide(thermally grown)	500±50
Doping	Undoped, intrinsic Si(Fz grown)
Polish	Single side polished Si
Resistivity(ohm-cm)	＞20000
Front surface	Polished
Back surface	Etched
Packaging	Hard cassette
Shelf life	6 months,min,at the time of delivery

Technical specifications for N-type Si wafers

Parameter	data
Diameter	50.8±0.38
Grade	Prime
Material	Si+Sio2(thermal)
Orientation	(100)±0.5℃
Thickness of wafer(μm）	280±25
Doping	Undoped, intrinsic Si(Fz grown)
Polish	Single side polished Si
Resistivity(ohm-cm)	＞20000
Front surface	Polished
Back surface	Etched
Packaging	Hard cassette
Shelf life	6 months,min,at the time of delivery

Technical specifications for sapphire substrates

Parameter
Diameter	50.8±0.20
Material	Al2o3
Purity	99％ or better
Crystal	Single crystal
Orientation	C-plane,(0001)±0.5°
Primary flat length	16±1mm
TTV(μm）	≤10
BOW(μm）	≤10
WARP(μm）	≤10