electroformed hub type diamond dicing blade

Electroformed Diamond Dicing Blade – Hub Type

Hub type electroforming nickel bonded dicing blade

Applications: dicing silicon wafers, copper wafer and compound semiconductor wafers such as GaAs and SiC.

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Product Details

Diamond dicing blade is used for grooving ,cutting silicon, compound semiconductors, glass and other materials in electronic information industry. Diamond dicing blade is one of new products developed .Our dicing blades include diamond hub dicing blade and diamond hubless dicing blade.

Applications of electroformed diamond dicing blade
Scribing dicing silicon wafers, copper wafer and compound semiconductor wafers such as GaAs and SiC.

How to selection of the correct types of dicing blades to cut materials
* Binder of resin bond (soft strength) dicing blade, scribing hard and brittle material
* Binder of metal bond (medium strength) dicing blade
* Binder of electroplated bond (hard bond), scribing softer material

Customer Cases

Case of electroformed hub-type diamond dicing blade for dicing wafer

Dicing Blade: Z1: HD25 CC 4000N70，Z2: HD25 CB 3500N50
Wafer Type	8’’ IC silicon wafer, the cutting path contains metal, no laser ablation
RotationSpeed of Z1	55000rpm
RotationSpeed of Z2	35000rpm
Wafer THK	220μm
InfeedSpeed of Z1	60mm/s
InfeedSpeed of Z2	60mm/s

Case of electroformed hub-type diamond dicing blade for dicing Oxide wafer

Dicing blade： HD25 AA 5000H90
Wafer Type	GaAs, LED
Chip size	98umx98um
In feed speed	20-50mm/s
Wafer THK	150um
Kerf width	≤20um
Spindle speed	40krpm

Dicing blade： HD25 DD 2000S50
Wafer type：	LITAO3, fliters
Chip size	1.2×0.8mm
In feed speed	15-25mm/s
Wafer THK	200μm
Street width	80um
Spindle speed	40krpm

Case of dicing Sic wafer with electroformed hub type diamond dicing blade

Dicing blade：HD25 BB 2000N50，HD25 BE 2000N50
Wafer type：	6’’ SiC，Backside Metallization（Gold）
Chip size	4.5×4.5 mm
In feed speed	5-6mm/s
Wafer THK	180-380um
Kerf width	60um
Spindle speed	45-55K rpm
If combined with the mid-process grinding technique,it can significantly improve the fracture shown in the figure below, and keep the fracture size below 20um.

Case of electroformed hub-type diamond dicing blade for dicing Silicon wafer MOSFETs

Dicing blade： HD25 BB 4000N50
Wafer type：	Silicon wafer MOSFETs
Wafer THK	150μm
Chip size	0.6×0.6mm
Streetwidth	60um
In feed speed	40-60mm/s
Spindle speed	35krpm

Case of electroformed hub-type diamond dicing blade for dicing GPP chip

Dicing blade: HD25 CB 2000N110
Material	GPP:Si + Glass
Application	power device
Wafer size	4 inch
Wafer THK	360um
In feed speed	11mm/s
Spindle speed	40k rpm
Quality: Edge Chipping<10um, Backside Chipping<20um, kerf<25um

Dicing blade：Z1: HD25 CC 4500H70，Z2: HD25 BA 4800H50
Wafer Type	12’’ memory wafer (with a DAF film on the backside)
Wafer THK	80um
Rotation Speed of Z1	50000rpm
Street width	60μm
Rotation Speed of Z2	45000rpm
In feed speed	20mm/s
Requirement：	Edge chipping does not reach the guard ring，sidewall chipping≤30μm。
Result：	Edge chipping≤10μm，sidewall chipping≤20μm。

Drawing&Specification

Exposure(μm)	380	510	640	760	890	1020	1150	1270	Grit Size
Kerf width(μm)	380-510	510-640	640-760	760-890	890-1020	1020-1150	1150-1270	1270-1400	#5000 #4800 #4500 #4000 #3500 #3000 #2500 #2000 #1800 #1700 #1500
16-20	20*380	20*510
21-25	25*380	25*510	25*640
26-30	30*380	30*510	30*640	30*760	30*890	20*1020
31-35	35*380	35*510	35*640	35*760	35*890	35*1020
36-40	40*380	40*510	40*640	40*760	40*890	40*1020	40*1150
41-50	50*380	50*510	50*640	50*760	50*890	50*1020	50*1150
51-60		60*510	60*640	60*760	60*890	60*1020	60*1150	60*1270
61-70			70*640	70*760	70*890	70*1020	70*1150	70*1270
71-80					80*890	80*1020	80*1150	80*1270
81-90						90*1020	90*1150	90*1270
Special size can be designed according to customers’ requirement

Case of Electroformed hub type diamond dicing blade for cutting wafer

Workpiece parameters
Wafer Material	LiNbO3
Wafer size	100mm
Wafer thickness	1mm
Chip size	1.3mm*1.5mm
Cutting lane width	0.08mm
Quality requirements: Front chipping size: 0.005mm, Back chipping size : 0.010mm